Search results for "Dielectric breakdown"

showing 3 items of 3 documents

Dielectric breakdown and urban growth

2015

urban growthdielectric breakdown[SHS.GEO] Humanities and Social Sciences/Geography
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Influence of low amounts of nanostructured silica and calcium carbonate fillers on the large-area dielectric breakdown performance of bi-axially orie…

2014

Influence of low amounts (1.0-2.0wt-%) of nanostructured silica and calcium carbonate fillers on the large area dielectric breakdown performance of bi-axially oriented polypropylene (BOPP) is analyzed. A multi-breakdown measurement method based on the self-healing breakdown capability of metallized film is utilized for the breakdown characterization in order to cover relatively large total film areas, thus leading to results of higher relevance from the practical point-of-view. The dispersion and distribution qualities of filler particles at the nanoscale are evaluated with transmission electron microscopy (TEM) imaging. Weibull statistical analysis suggests that the breakdown distribution …

PolypropyleneNanocompositeMaterials scienceDielectric strengthta114dielectric brakdown performanceComposite numberdielectric breakdown performancechemistry.chemical_compoundpolymer nanocomposite filmCalcium carbonatechemistryTransmission electron microscopysilicaHomogeneity (physics)calcium carbonateComposite materialNanoscopic scaleta116polypropylene
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Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current

2001

We have investigated the properties of soft breakdown (SBO) in thin oxide (4.5 nm) nMOSFETs with measurements of the gate and substrate leakage currents using the carrier separation technique. We have observed that, at lower gate voltages, the level of the substrate current exhibits a plateau. We propose that the observed plateau is due to the Shockley-Hall-Read (SHR) generation of hole-electron pairs in the space charge region and at the Si-SiO/sub 2/ interface. At higher voltages, the substrate current steeply increases with voltage, due to a tunneling mechanism, trap-assisted or due to a localized effective thinning of the oxide, from the substrate valence band to the gate conduction ban…

Materials sciencePhysics and Astronomy (miscellaneous)business.industryElectrical engineeringOxideTime-dependent gate oxide breakdownReliabilitySettore ING-INF/01 - ElettronicaElectronic Optical and Magnetic MaterialsThreshold voltagechemistry.chemical_compoundMOSFETDepletion regionchemistryLeakage currentMOSFETOptoelectronicsDielectric breakdownElectrical and Electronic EngineeringbusinessQuantum tunnellingLeakage (electronics)Voltage
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